Electronic Conduction Process in 1T-TaS2

Paul D. Hambourger; F. J. Di Salvo

doi:10.1016/0378-4363(80)90227-2

Electronic Conduction Process in 1T-TaS₂

Paul D. Hambourger, F. J. Di Salvo

Bell Laboratories

Research output: Contribution to journal › Article › peer-review

Abstract

The electrical resistivity parallel to the layers of Se-doped 1T-TaS ₂ has been measured over the range 1.3 < T < 240 K. Results support the existence of disorder-induced carrier localization in this material. Anisotropy studies in pure samples show that θ _c /θ _a ~ 500, where θ _c and θ _a are the resistivities normal and parallel to the layers, respectively, suggesting that the conduction is 2-dimensional.

Original language	American English
Journal	Physica B+C
Volume	99
DOIs	https://doi.org/10.1016/0378-4363(80)90227-2
State	Published - Jan 1 1980

Disciplines

Physics

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10.1016/0378-4363(80)90227-2License: CC BY

Cite this

@article{be57fb946149469599625509199a7c65,

title = "Electronic Conduction Process in 1T-TaS2",

abstract = " The electrical resistivity parallel to the layers of Se-doped 1T-TaS 2 has been measured over the range 1.3 < T < 240 K. Results support the existence of disorder-induced carrier localization in this material. Anisotropy studies in pure samples show that θ c /θ a \textasciitilde{} 500, where θ c and θ a are the resistivities normal and parallel to the layers, respectively, suggesting that the conduction is 2-dimensional.",

author = "Hambourger, \{Paul D.\} and \{Di Salvo\}, \{F. J.\}",

note = "Hambourger, P.D. and F.J. di Salvo. 1980. Electronic conduction process in 1T-TaS2. Physica B+C 99, no. 1-4:173-176.",

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AU - Di Salvo, F. J.

N1 - Hambourger, P.D. and F.J. di Salvo. 1980. Electronic conduction process in 1T-TaS2. Physica B+C 99, no. 1-4:173-176.

PY - 1980/1/1

Y1 - 1980/1/1

N2 - The electrical resistivity parallel to the layers of Se-doped 1T-TaS 2 has been measured over the range 1.3 < T < 240 K. Results support the existence of disorder-induced carrier localization in this material. Anisotropy studies in pure samples show that θ c /θ a ~ 500, where θ c and θ a are the resistivities normal and parallel to the layers, respectively, suggesting that the conduction is 2-dimensional.

AB - The electrical resistivity parallel to the layers of Se-doped 1T-TaS 2 has been measured over the range 1.3 < T < 240 K. Results support the existence of disorder-induced carrier localization in this material. Anisotropy studies in pure samples show that θ c /θ a ~ 500, where θ c and θ a are the resistivities normal and parallel to the layers, respectively, suggesting that the conduction is 2-dimensional.

UR - https://engagedscholarship.csuohio.edu/sciphysics_facpub/172

UR - http://journals.ohiolink.edu/ejc/article.cgi?issn=03784363&issue=v99i1-4&article=173_ecpi1

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