Observation of the Transition from Semiconductor to High-Tc Superconductor in (SnxEu1-X)YMo6S8 Under High Pressure

D. W. Harrison; K. C. Lim; J. D. Thompson; C. Y. Huang; Paul D. Hambourger; H. L. Luo

doi:10.1103/PhysRevLett.46.280

Observation of the Transition from Semiconductor to High-Tc Superconductor in (SnxEu1-X)YMo6S8 Under High Pressure

D. W. Harrison, K. C. Lim, J. D. Thompson, C. Y. Huang, Paul D. Hambourger, H. L. Luo

Research output: Contribution to journal › Article › peer-review

Abstract

Pressure-induced high-temperature superconductivity is observed in semiconducting (Sn x Eu 1-x ) y Mo 6 S 8 , where 0<~x<~0.1 and y=1.0 and 1.2, having a carrier concentration &simeq;10 19 /cm 3 at 4.2 K as determined from Hall-effect measurements. Above a threshold pressure &simeq;7 kbar, superconductivity appears with dT c /dP&simeq;2 K/kbar. The maximum superconducting temperature (T c &sim;10 K), reached at &sim; 12 kbar, represents the highest pressure-induced T c in any semiconductor. For P>~13 kbar, the temperature-dependent resistance appears metallic.

Original language	American English
Journal	Physical Review Letters
Volume	46
DOIs	https://doi.org/10.1103/PhysRevLett.46.280
State	Published - Jan 26 1981

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Physics

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title = "Observation of the Transition from Semiconductor to High-Tc Superconductor in (SnxEu1-X)YMo6S8 Under High Pressure",

abstract = " Pressure-induced high-temperature superconductivity is observed in semiconducting (Sn x Eu 1-x ) y Mo 6 S 8 , where 0<\textasciitilde{}x<\textasciitilde{}0.1 and y=1.0 and 1.2, having a carrier concentration \&simeq;10 19 /cm 3 at 4.2 K as determined from Hall-effect measurements. Above a threshold pressure \&simeq;7 kbar, superconductivity appears with dT c /dP\&simeq;2 K/kbar. The maximum superconducting temperature (T c \&sim;10 K), reached at \&sim; 12 kbar, represents the highest pressure-induced T c in any semiconductor. For P>\textasciitilde{}13 kbar, the temperature-dependent resistance appears metallic.",

author = "Harrison, \{D. W.\} and Lim, \{K. C.\} and Thompson, \{J. D.\} and Huang, \{C. Y.\} and Hambourger, \{Paul D.\} and Luo, \{H. L.\}",

note = "Harrison, D. W. , K. C. Lim, J. D. Thompson, C. Y. Huang, Paul D. Hambourger, and H. L. Luo. {"}Observation of the Transition from Semiconductor to High-Tc Superconductor in (SnxEu1-X)YMo6S8 Under High Pressure.{"} Physical Review Letters 46 (1981): 280-283.",

year = "1981",

month = jan,

day = "26",

doi = "10.1103/PhysRevLett.46.280",

language = "American English",

volume = "46",

journal = "Physical Review Letters",

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TY - JOUR

T1 - Observation of the Transition from Semiconductor to High-Tc Superconductor in (SnxEu1-X)YMo6S8 Under High Pressure

AU - Harrison, D. W.

AU - Lim, K. C.

AU - Thompson, J. D.

AU - Huang, C. Y.

AU - Hambourger, Paul D.

AU - Luo, H. L.

N1 - Harrison, D. W. , K. C. Lim, J. D. Thompson, C. Y. Huang, Paul D. Hambourger, and H. L. Luo. "Observation of the Transition from Semiconductor to High-Tc Superconductor in (SnxEu1-X)YMo6S8 Under High Pressure." Physical Review Letters 46 (1981): 280-283.

PY - 1981/1/26

Y1 - 1981/1/26

N2 - Pressure-induced high-temperature superconductivity is observed in semiconducting (Sn x Eu 1-x ) y Mo 6 S 8 , where 0<~x<~0.1 and y=1.0 and 1.2, having a carrier concentration &simeq;10 19 /cm 3 at 4.2 K as determined from Hall-effect measurements. Above a threshold pressure &simeq;7 kbar, superconductivity appears with dT c /dP&simeq;2 K/kbar. The maximum superconducting temperature (T c &sim;10 K), reached at &sim; 12 kbar, represents the highest pressure-induced T c in any semiconductor. For P>~13 kbar, the temperature-dependent resistance appears metallic.

AB - Pressure-induced high-temperature superconductivity is observed in semiconducting (Sn x Eu 1-x ) y Mo 6 S 8 , where 0<~x<~0.1 and y=1.0 and 1.2, having a carrier concentration &simeq;10 19 /cm 3 at 4.2 K as determined from Hall-effect measurements. Above a threshold pressure &simeq;7 kbar, superconductivity appears with dT c /dP&simeq;2 K/kbar. The maximum superconducting temperature (T c &sim;10 K), reached at &sim; 12 kbar, represents the highest pressure-induced T c in any semiconductor. For P>~13 kbar, the temperature-dependent resistance appears metallic.

UR - https://engagedscholarship.csuohio.edu/sciphysics_facpub/46

U2 - 10.1103/PhysRevLett.46.280

DO - 10.1103/PhysRevLett.46.280

M3 - Article

VL - 46

JO - Physical Review Letters

JF - Physical Review Letters

ER -

Observation of the Transition from Semiconductor to High-Tc Superconductor in (SnxEu1-X)YMo6S8 Under High Pressure

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