Transport Properties of 1T-TaS2-xSex

Paul D. Hambourger; F. J. Di Salvo

doi:10.1016/0038-1098(80)90169-6

Transport Properties of 1T-TaS_2-xSe_x

Paul D. Hambourger, F. J. Di Salvo

Bell Laboratories

Research output: Contribution to journal › Article › peer-review

Abstract

The electrical resistivity and Hall coefficient of pure and Se-doped 1T-TaS ₂ have been measured over the range 1.3

Original language	American English
Journal	Solid State Communications
Volume	35
DOIs	https://doi.org/10.1016/0038-1098(80)90169-6
State	Published - Aug 1 1980

Disciplines

Physics

Access to Document

10.1016/0038-1098(80)90169-6License: CC BY

Cite this

@article{15aedb3bd9b84db6bbeaf6c5b15ce174,

title = "Transport Properties of 1T-TaS2-xSex",

abstract = " The electrical resistivity and Hall coefficient of pure and Se-doped 1T-TaS 2 have been measured over the range 1.3",

author = "Hambourger, \{Paul D.\} and \{Di Salvo\}, \{F. J.\}",

note = "Hambourger, P., , \& Di Salvo, F. (1980). Transport properties of 1T-TaS2-xSex. Solid State Communications, 35(5), 405-408.",

year = "1980",

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doi = "10.1016/0038-1098(80)90169-6",

language = "American English",

volume = "35",

journal = "Solid State Communications",

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AU - Hambourger, Paul D.

AU - Di Salvo, F. J.

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PY - 1980/8/1

Y1 - 1980/8/1

N2 - The electrical resistivity and Hall coefficient of pure and Se-doped 1T-TaS 2 have been measured over the range 1.3

AB - The electrical resistivity and Hall coefficient of pure and Se-doped 1T-TaS 2 have been measured over the range 1.3

UR - https://engagedscholarship.csuohio.edu/sciphysics_facpub/165

UR - http://journals.ohiolink.edu/ejc/article.cgi?issn=00381098&issue=v35i0005&article=405_tpo1

U2 - 10.1016/0038-1098(80)90169-6

DO - 10.1016/0038-1098(80)90169-6

M3 - Article

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JO - Solid State Communications

JF - Solid State Communications

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